Electrochemical doping and semiconductor properties of poly-5,10,15,20-tetrakis(p-aminophenyl)porphyrin films

Poly-5,10,15,20-tetrakis(p-aminophenyl)porphyrin films were obtained by interfacial polymerization and electropolymerization. According to the results of electron spectroscopy and IR spectroscopy it has been determined that oxidative polymerization of 5,10,15,20-tetrakis(p-aminophenyl)porphyrin, regardless of its type (chemical/electrochemical), proceeds through the formation of phenazine and dihydrophenazine fragments. It has been established that the film obtained by the electrochemical method is in the oxidized state, the supporting electrolyte anions are included in the film. The polyporphyrin films obtained by interfacial polymerization are non-conductive. As a result of doping the films obtained by the chemical method, due to the oxidation in the anodic potential region, the polymer acquires p-type semiconductor properties. It has been shown that electrochemical doping of poly-5,10,15,20-tetrakis(p-aminophenyl)porphyrin films can make them electroconductive. The obtained films can be recommended as elements of photovoltaic devices, the operation of which is based on the excitation of excitons under the action of light radiation, the redistribution of which leads to a change in the potential of the working electrode.