High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55-μm Band

被引：52

作者：

Akahane, Kouichi ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

Kawanishi, Tetsuya ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 02期

关键词：

Characteristic temperature; quantum dot (QD); stacking strain compensation; DEPENDENCE; LAYER;

D O I：

10.1109/LPT.2009.2035821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20 degrees C-80 degrees C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.

引用

页码：103 / 105

页数：3

共 17 条

[1] Role of A1 in spacer layer on the formation of stacked InAs quantum dot structures on InP(311)B [J].

Akahane, K ;

Yamamoto, N ;

Ohtani, N ;

Okada, Y ;

Kawabe, M .

JOURNAL OF CRYSTAL GROWTH, 2003, 256 (1-2) :7-11

[2] Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate [J].

Akahane, K ;

Ohtani, N ;

Okada, Y ;

Kawabe, M .

JOURNAL OF CRYSTAL GROWTH, 2002, 245 (1-2) :31-36

[3] Highly-ordered and highly-stacked (150-layers) quantum dots [J].

Akahane, Kouichi ;

Yamamoto, Naokatsu ;

Gozu, Shin-ichiro ;

Ueta, Akio ;

Ohtani, Naoki ;

Tsuchiya, Masahiro .

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS, 2006, :192-+

[4] Highly stacked quantum-dot laser fabricated using a strain compensation technique [J].

Akahane, Kouichi ;

Yamamoto, Naokatsu ;

Tsuchiya, Masahiro .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

[5] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[6] On the temperature sensitivity of 1.5-μm GaInNAsSb lasers [J].

Bank, SR ;

Goddard, LL ;

Wistey, MA ;

Yuen, HB ;

Harris, JS .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (05) :1089-1098

[7] Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser [J].

Huang, XD ;

Stintz, A ;

Hains, CP ;

Liu, GT ;

Cheng, J ;

Malloy, KJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) :227-229

[8] Photon lifetime dependence of modulation efficiency and K factor in 1.3 μm self-assembled InAs/GaAs quantum-dot lasers:: Impact of capture time and maximum modal gain on modulation bandwidth [J].

Ishida, M ;

Hatori, N ;

Akiyama, T ;

Otsubo, K ;

Nakata, Y ;

Ebe, H ;

Sugawara, M ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4145-4147

[9]

Kim KM, 2003, JPN J APPL PHYS 1, V42, P54, DOI 10.1143/JJAP.42.541

[10] InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency [J].

Kovsh, AR ;

Maleev, NA ;

Zhukov, AE ;

Mikhrin, SS ;

Vasil'ev, AP ;

Shernyakov, YM ;

Maximov, MV ;

Livshits, DA ;

Ustinov, VM ;

Alferov, ZI ;

Ledentsov, NN ;

Bimberg, D .

ELECTRONICS LETTERS, 2002, 38 (19) :1104-1106

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