Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayered thin films prepared by rf magnetron sputtering

被引：48
|
作者：
Wu, J. G. [1 ]
Xiao, D. Q. [1 ]
Zhu, J. G. [1 ]
Zhu, J. L. [1 ]
Tan, J. Z. [1 ]
Zhang, Q. L. [1 ]
机构：
[1] Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2475735
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Pb(Zr1-xTix)O-3 multilayered films consisting of Pb(Zr0.8Ti0.2)O-3 and Pb(Zr0.2Ti0.8)O-3 layers were deposited on LaNiO3(110)/Pt/Ti/SiO2/Si substrates by rf magnetron sputtering. All films comprise five periodicities, the layer thicknesses of rhombohedral (d(R)) and tetragonal (d(T)) phases in one periodicity are varied. The LaNiO3 buffer layer leads to the (101)/(110) orientation of the films. The electrical properties of the films were investigated as a function of d(R)/d(T). The films with d(R)/d(T)=1:2 possess enhanced dielectric and ferroelectric properties. The mechanism of the enhanced electrical properties was discussed, and it was found that the strain is also an important factor to affect electrical properties. (c) 2007 American Institute of Physics.
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页数：3
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