Influence of extended structural defects on the effective carrier concentration of p-type Hg0.78Cd0.22Te implanted with aluminium ions

被引：4

作者：

Lévêque, P ^{[1
]}

Declémy, A ^{[1
]}

Renault, PO ^{[1
]}

机构：

[1] Univ Poitiers, UMR 6630 CNRS, Met Phys Lab, F-86960 Futuroscope, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 168卷 / 01期

关键词：

ion implantation; HgCdTe; defects;

D O I：

10.1016/S0168-583X(99)00765-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Al2+ (320 keV) ions were implanted at room temperature into p-type (1 1 1)-Hg0.78Cd0.22Te with fluences ranging From 3x10(11) to 3x10(14) cm(-2). The implanted samples were analyzed by infrared reflectivity and by diffuse X-ray scattering. These two contactless and non-destructive techniques provide quantitative results on free carriers and on structural defects which are induced by ion implantation into p-type (1 1 1)-Hg0.78Cd0.22Te. Comparison between the evolution of the free carrier concentration and the evolution of the structural defects with increasing the fluence suggests that extended structural defects directly influence the doping concentration in as-implanted samples. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：40 / 46

页数：7

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