Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band-Bending

被引:38
作者
Hu, Youfan [1 ]
Liu, Yang [1 ]
Li, Wenliang [1 ]
Gao, Min [1 ]
Liang, Xuelei [1 ]
Li, Quan [2 ]
Peng, Lian-Mao [1 ]
机构
[1] Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
[2] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China
基金
美国国家科学基金会;
关键词
CURRENT-VOLTAGE CHARACTERISTICS; SEMICONDUCTING NANOWIRES; ACCUMULATION LAYERS; DEVICES; NANOSTRUCTURES; PHOTODETECTORS; PROGRESS; GROWTH;
D O I
10.1002/adfm.200900179
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Direct experimental evidence for the existence of a 2D electron gas in devices based on ZnO nanowires (NWs) is presented. A two-channel core/shell model is proposed for the interpretation of the temperature-dependent current-voltage (I-V) characteristics of the ZnO NW, where a mixed metallic-semiconducting behavior is observed. The experimental results are quantitatively analyzed using a weak-localization theory, and suggest that the NW is composed of a "bulk" semiconducting core with a metallic surface accumulation layer, which is basically a 2D electron gas in which the electron- phonon inelastic scattering is much weaker than the electron-electron inelastic scattering. A series of I-V measurements on a single NW device are carried out by alternating the atmosphere (vacuum, H-2, vacuum, O-2), and a reversible change in the conductance from metallic to semiconducting is achieved, indicating the surface accumulation layer is likely hydroxide- induced. Such results strongly support the two-channel mode and demonstrate the controllable tuning of the ZnO NW electrical behavior via surface band-bending.
引用
收藏
页码:2380 / 2387
页数:8
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