Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO2 for the advanced gate stack

被引：19
作者：
Chang, K. -S. [1 ]
Green, M. L.
Suehle, J.
Vogel, E. M.
Xiong, H.
Hattrick-Simpers, J.
Takeuchi, I.
Famodu, O.
Ohmori, K.
Ahmet, P.
Chikyow, T.
Majhi, P.
Lee, B. -H.
Gardner, M.
机构：
[1] NIST, Gaithersburg, MD 20899 USA
[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[3] NIMS, Tsukuba, Ibaraki 3050044, Japan
[4] SEMATECH, Austin, TX 78741 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.2357011
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (Delta V-fb), work function (Phi(m)), and leakage current density (J(L)) variations. A more negative Delta V-fb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Phi(m) near the Ti-rich corners and higher Phi(m) near the Ni- and Pt-rich corners. In addition, measured J(L) values can be explained consistently with the observed Phi(m) variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems. (c) 2006 American Institute of Physics.
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页数：3
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