Online Junction Temperature Measurement Using Peak Gate Current

被引：0

作者：

Baker, Nick ^{[1
]}

Munk-Nielsen, Stig ^{[1
]}

Iannuzzo, Francesco ^{[1
]}

Liserre, Marco ^{[2
]}

机构：

[1] Aalborg Univ, Dept Energy Technol, Aalborg, Denmark

[2] Univ Kiel, Chair Power Elect, Kiel, Germany

来源：

2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015) | 2015年

关键词：

Junction Temperature; IGBT; MOSFET; Measurement; Reliability; Power Semiconductors; POWER; MODULES; DEVICES;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.

引用

页码：1270 / 1275

页数：6

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