In situ observations of crystal growth behavior of silicon melt

被引：65

作者：

Fujiwara, K

Nakajima, K

Ujihara, T

Usami, N

Sazaki, G

Hasegawa, H

Mizoguchi, S

Nakajima, K

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 243卷 / 02期

关键词：

confocal scanning laser microscope; facet interface; in situ observation; planar interface; undercooling; growth from melt; silicon;

D O I：

10.1016/S0022-0248(02)01521-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Crystal growth behavior of silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of the growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7degrees. The growth behavior of silicon melt was explained by an analytical expression based on a two-dimensional nucleation model. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：275 / 282

页数：8

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