Electron Beam Infrared Nano-Ellipsometry of Individual Indium Tin Oxide Nanocrystals

被引:12
作者
Olafsson, Agust [1 ]
Busche, Jacob A. [2 ]
Araujo, Jose J. [2 ]
Maiti, Arpan [1 ]
Idrobo, Juan Carlos [3 ]
Gamelin, Daniel R. [2 ]
Masiello, David J. [2 ]
Camden, Jon P. [1 ]
机构
[1] Univ Notre Dame, Dept Chem & Biochem, Notre Dame, IN 46556 USA
[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
infrared plasmonics; electron energy-loss spectroscopy; doped semiconductor nanocrystals; SURFACE-PLASMON RESONANCES; OPTICAL-PROPERTIES; THIN-FILMS; STRUCTURAL-PROPERTIES; METAL NANOPARTICLES; FIELD MICROSCOPY; CARRIER-DENSITY; SPECTROSCOPY; SCATTERING; SIZE;
D O I
10.1021/acs.nanolett.0c02772
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Leveraging recent advances in electron energy monochromation and aberration correction, we record the spatially resolved infrared plasmon spectrum of individual tin-doped indium oxide nanocrystals using electron energy-loss spectroscopy (EELS). Both surface and bulk plasmon responses are measured as a function of tin doping concentration from 1-10 atomic percent. These results are compared to theoretical models, which elucidate the spectral detuning of the same surface plasmon resonance feature when measured from aloof and penetrating probe geometries. We additionally demonstrate a unique approach to retrieving the fundamental dielectric parameters of individual semiconductor nanocrystals via EELS. This method, devoid from ensemble averaging, illustrates the potential for electron-beam ellipsometry measurements on materials that cannot be prepared in bulk form or as thin films.
引用
收藏
页码:7987 / 7994
页数:8
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