Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

被引：231

作者：

Yoon, Jung Ho ^{[1
,2
]}

Song, Seul Ji ^{[1
,2
]}

Yoo, Il-Hyuk ^{[1
,2
]}

Seok, Jun Yeong ^{[1
,2
]}

Yoon, Kyung Jean ^{[1
,2
]}

Kwon, Dae Eun ^{[1
,2
]}

Park, Tae Hyung ^{[1
,2
]}

Hwang, Cheol Seong ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

来源：

ADVANCED FUNCTIONAL MATERIALS | 2014年 / 24卷 / 32期

基金：

新加坡国家研究基金会;

关键词：

SWITCHES; DENSITY; DEVICE;

D O I：

10.1002/adfm.201400064

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and electroforming-free characteristics is an impending task for the development of resistance switching random access memory. In this work, a two-layered dielectric structure consisting of HfO2 and Ta2O5 layers, which are in contact with the TiN and Pt electrode, is presented for achieving these tasks simultaneously in one sample configuration. The HfO2 layer works as the resistance switching layer by trapping or detrapping of electronic carriers, whereas the Ta2O5 layer remains intact during the whole switching cycle, which provides the rectification. With the optimized structure and operation conditions for the given materials, excellent RS uniformity, electroforming-free, and self-rectifying functionality could be simultaneously achieved from the Pt/Ta2O5/HfO2/TiN structure.

引用

页码：5086 / 5095

页数：10

共 34 条

[11] New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices [J].