Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi3TaTiO9 solid solution films by MOCVD and their properties

被引:5
作者
Mitsuya, M
Osada, M
Saito, K
Funakubo, H
机构
[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[3] Philips Japan Ltd, Applicat Lab, Analyt Dept, Sagamihara, Kanagawa 2280803, Japan
关键词
solid solutions; chemical vapor deposition processes; inorganic compounds; ferroelectric materials;
D O I
10.1016/S0022-0248(01)01985-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Thin films of solid solution of SrBi2Ta0.7Nb0.3)(2)O-9-Bi3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1 )Pt/Ti/SiO2/Si substrates at 650degreesC by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (10 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)(2)O-9 film. Moreover, Curie temperature of this material with x = 0.3 was 440degreesC and was almost the same as that of Sr0.8Bi2.2(Ta(0.7)Nb0.(3))(2)O-9. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:473 / 477
页数:5
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