AC IMPEDANCE SPECTROSCOPY OF Al/a-SiC/c-Si(p)/Al HETEROSTRUCTURE UNDER ILLUMINATION

被引：11
|
作者：
Perny, Milan [1 ]
Saly, Vladimir [1 ]
Vary, Michal [1 ]
Mikolasek, Miroslav [1 ]
Huran, Jozef [2 ]
Packa, Juraj [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 2014年 / 65卷 / 03期
关键词：
PECVD; heterojunction; silicon carbide; equivalent AC circuit; complex impedance; SIC-H FILMS; NEGATIVE CAPACITANCE; SOLAR-CELLS; DEPOSITION; TETRAMETHYLSILANE; TRIMETHYLSILANE; DIFFUSION;
D O I：
10.2478/jee-2014-0027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I - V) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.
引用
收藏
页码：174 / 178
页数：5
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