A method for optimizing the electrical conductivity of Al:ZnO TCO films

被引：21

作者：

Efafi, Babak ^{[1
,2
]}

Mousavi, Seyedeh Soraya ^{[2
,3
]}

Ara, Mohammad Hossein Majles ^{[2
]}

Ghafari, Bijan ^{[1
]}

Mazandarani, Hamid Reza ^{[1
]}

机构：

[1] Iran Univ Sci & Technol, Dept Phys, Photon Lab, Tehran, Iran

[2] Kharazmi Univ, Dept Phys, Nanophoton Lab, Karaj, Iran

[3] Alzahra Univ, Dept Phys, Tehran, Iran

来源：

MATERIALS LETTERS | 2017年 / 195卷

关键词：

ZnO Thin films; Electrical properties; Sol-gel preparation; AL-DOPED ZNO; THIN-FILMS; SOL; EMISSION; NANOCRYSTALS;

D O I：

10.1016/j.matlet.2017.02.079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we propose a new strategy for optimizing the conductivity of AZO (ZnO: Al) thin films as transparent conductive oxide (TCOs) based on adapting the atomic percentage of the dopant to the precursor sol concentration. A comparison between the electrical current of pure ZnO and AZO thin films indicated that, the increase in molar concentration of ZnO solution and percentage of Aluminum, respectively up to 1 M and 2 at.%, increased the charge carrier concentration continuously. But a little more increase in both of them actually decreased the conduction. Optical behavior of thin films showed blue shifts in the optical band gap that could be explained by the Burstein-Moss effect and Brus equation. The lattice stress and crystal size of thin films showed that Al+3 ions were properly localized in the ZnO structure prepared with 1 M concentration at 2 at.% Al. (C) 2017 Elsevier B. V. All rights reserved.

引用

页码：52 / 54

页数：3

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