Synthesis of Bi2S3 with Different Sulfur Content by Conventional High Temperature Solid State Solvothermal Route

被引：0

作者：

Solanki, S. I. ^{[1
]}

Patel, I. B. ^{[1
]}

Shah, N. M. ^{[2
]}

机构：

[1] Veer Narmad South Gujarat Univ, Dept Phys, Surat 395007, India

[2] North Shah Sci Coll, Dept Phys, Kamrej- 394185, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷

关键词：

Bismuth Sulfide; Solvothermal route; XRD; SEM; EDXS; UV-Vis analysis; POWDERS;

D O I：

10.1063/1.4873000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth sulfide (Bi2S3) is a binary chalcogenide compound material belonging to V-VI group of semiconductors. Because of its direct band gap of 1.3 eV and high figure of merit (ZT) value, it is widely used as a thermo electronic-cooling material based on the Peltier effect. The electrical and optical property of Bi2S3 material is strongly dependent on stoichiometric composition, defect chemistry and structure. In this study, we have synthesized Bi2Sx (x = 3.15, 3.30, 3.45) compound material with different sulfur content by conventional high temperature solid state solvothermal reaction of bismuth and sulfur. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDXS) analysis of synthesized compound materials were carried out to observe crystallinity, surface morphology and composition of elements in the compound. The optical analysis revealed that energy band gap decreases with increase of sulfur content.

引用

页码：1473 / 1475

页数：3

共 9 条

[1]

Chen Xiangying, 2006, J CRYST GROWTH, V256, P368

[2] Scalable synthesis of A2S3 (A=Sb, Bi) submicro/nanowires using their powders via solvothermal proceeding [J].

Ji Tianhao ;

Liu Guanrao ;

Qi Xingyi ;

Yang Qinglin ;

Deng Yuan ;

Guo Lin .

CHINESE SCIENCE BULLETIN, 2006, 51 (06) :655-660

[3] Novel single-source precursors approach to prepare highly uniform Bi2S3 and Sb2S3 nanorods via a solvothermal treatment [J].

Lou, Wenjing ;

Chen, Miao ;

Wang, Xiaobo ;

Liu, Weimin .

CHEMISTRY OF MATERIALS, 2007, 19 (04) :872-878

[4]

Rabin Oled, 2006, NAT MATER, V5, P1571

[5]

Rehani BR, 2006, INDIAN J PURE AP PHY, V44, P157

[6] Syntheses, Growth Mechanism, and Optical Properties of [001] Growing Bi2S3 Nanorods [J].

Wang, Yue ;

Chen, Jing ;

Wang, Peng ;

Chen, Ling ;

Chen, Yu-Biao ;

Wu, Li-Ming .

JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (36) :16009-16014

[7] Optical switches based on Bi2S3 nanowires synthesized by molten salt solvent method [J].

Xi, Yi ;

Hu, Chenguo ;

Zhang, Xiaomei ;

Zhang, Yan ;

Wang, Zhong Lin .

SOLID STATE COMMUNICATIONS, 2009, 149 (43-44) :1894-1896

[8] Individual Bi2S3 nanowire-based room-temperature H2 sensor [J].

Yao, K. ;

Gong, W. W. ;

Hu, Y. F. ;

Liang, X. L. ;

Chen, Q. ;

Peng, L. -M. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (23) :8721-8724

[9] Field effect and photoelectronic property of nanodevices made from single Bi2S3 nanowire [J].

Yao, Kun ;

Liang, Xuelei ;

Chen, Qing ;

Peng, Liamnao .

2006 1ST IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3, 2006, :1509-+

← 1 →