Crossover phenomenon for variable range hopping conduction in strong magnetic field

被引：13
作者：
Capoen, B
Biskupski, G
Briggs, A
机构：
[1] Univ Lille 1, Lab Phys Lasers Atomes & Mol, CNRS, UMR 8523,Ctr Etud & Rech Lasers & Applicat, F-59655 Villeneuve Dascq, France
[2] Univ Lille 1, UFR Phys, F-59655 Villeneuve Dascq, France
[3] CNRS, Ctr Rech Tres Basses Temp, F-38042 Grenoble, France
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 113卷 / 03期
关键词：
disordered systems; semiconductors; electronic transport; electronic states (localized);
D O I：
10.1016/S0038-1098(99)00456-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Crossover from Mott to Efros-Shklovskii (ES) Variable Range Hopping (VRH) conduction has been observed upon lowering temperature in barely insulating n-GaAs. We show that all the resistivity data, for different magnetic fields, obey a universal scaling function the two asymptotic forms of which are Mott and ES VRH laws. The variations of the crossover temperature and of other pertinent parameters with increasing magnetic field are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：135 / 139
页数：5
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