Upper critical field from normal state fluctuations in Bi2Sr2CuO6+δ

被引:8
|
作者
Bouquet, F. [1 ]
Fruchter, L.
Sfar, I.
Li, Z. Z.
Raffy, H.
机构
[1] Univ Paris 11, CNRS, Phys Solides Lab, F-91405 Orsay, France
[2] Fac Sci Tunis, Dept Phys, LPMC, Tunis 1060, Tunisia
来源
PHYSICAL REVIEW B | 2006年 / 74卷 / 06期
关键词
D O I
10.1103/PhysRevB.74.064513
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The in-plane magnetoresistance of an epitaxial Bi2Sr2CuO6+delta thin film was systematically investigated as a function of doping, above T-c. The orbital magnetoconductance is used to extract the crossover field line H-c2(*)(T) in the fluctuation regime. This field is found in good agreement with the upper critical field obtained from resistivity data below T-c, and exhibits a similar upward curvature, thus pointing toward the existence of a critical correlation length. The consequences regarding the nature of the resistive transition are discussed.
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页数:8
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