Porous silicon field emission arrays with built-in spacer

被引:0
|
作者
Kim, HR
Jessing, JR
Parker, DL
机构
来源
IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST | 1997年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this research, we applied the physical and electrical characteristics of porous silicon to enhance the performance of field emission devices. The surface of silicon field emitters have been modified by chemical etching with HF:HNO3:H2O solution, and electrochemical etching with HF:ethanol solution. The emitter surface became roughened and had nano-scale fibrils over the emitter surface in both cases. We found PS thin films prepared by chemical etching of Si field emitters also gave similar field enhancement effects as does electrochemically formed PS. Porous silicon contributed to the increase of the emission current, the reduction of operating voltage, the improvement of the uniformity of the emission characteristics between the emitters and the reduction of the probability of emitter failure during operation.
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页码:396 / 400
页数:5
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