Electron-hole pair generation in SiC high-temperature alpha particle detectors

被引：27

作者：

Garcia, Timothy R. ^{[1
]}

Kumar, Ashutosh ^{[2
]}

Reinke, Benjamin ^{[1
]}

Blue, Thomas E. ^{[1
]}

Windl, Wolfgang ^{[2
]}

机构：

[1] Ohio State Univ, Nucl Engn Program, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

SPECTROMETRY;

D O I：

10.1063/1.4824774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate alpha-particle detection in an n-type 4H-SiC Schottky diode detector up to a temperature of 500 degrees C using an Am-241 disc source. The measured spectra were used to calculate the electron-hole pair creation energy in 4H-SiC and its non-bandgap contribution, which are both found to decrease with increasing temperature. The full width at half maximum (FWHM) of the measured alpha-energy peaks was found to increase exponentially with temperature due to an exponential increase of leakage current. For our measurement system, above 300 degrees C, where the leakage current was 10(-6) A, this increase exceeded the FWHM at room temperature. (C) 2013 AIP Publishing LLC.

引用

页数：4

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