The fabrication of InGaP/Si light emitting diode by metalorganic chemical vapor deposition

被引：1

作者：

Hu, CC

Sheu, CS

Lee, MK

机构：

[1] Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 48卷 / 01期

关键词：

InGaP; light emitting diode; metalorganic chemical vapor deposition;

D O I：

10.1016/S0254-0584(97)80070-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, heteroepitaxy of InGaP on Si substrate with a GaAs buffer layer grown by metalorganic chemical vapor deposition is investigated. An InGaP p/n junction light emitting diode (LED) with electroluminescence linewidth of 65 meV and peak wavelength at 652 nm under 30 mA injection current has been fabricated. The feasibility of an InGaP LED integrated with Si electronics' on Si substrates is demonstrated.

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页码：17 / 20

页数：4

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