PAIR: Pin-aligned In-DRAM ECC architecture using expandability of Reed-Solomon code

被引:2
作者
Jeong, Sangmok [1 ]
Kang, SeungYup [1 ]
Yang, Joon-Sung [2 ]
机构
[1] Sungkyunkwan Univ, Dept Semicond & Display Engn, Suwon, South Korea
[2] Yonsei Univ, Dept Syst Semicond Engn, Seoul, South Korea
来源
PROCEEDINGS OF THE 2020 57TH ACM/EDAC/IEEE DESIGN AUTOMATION CONFERENCE (DAC) | 2020年
关键词
Error correction; DRAM; reliability; In-DRAM ECC;
D O I
10.1109/dac18072.2020.9218745
中图分类号
TP31 [计算机软件];
学科分类号
081202 ; 0835 ;
摘要
The computation speed of computer systems is getting faster and the memory has been enhanced in performance and density through process scaling. However, due to the process scaling, DRAMs are recently suffering from numerous inherent faults. DRAM vendors suggest In-DRAM Error Correcting Code (IECC) to cope with the unreliable operation. However, the conventional IECC schemes have concerns about miscorrection and performance degradation. This paper proposes a pin-aligned In-DRAM ECC architecture using the expandability of a Reed-Solomon code (PAIR), that aligns ECC codewords with DQ pin lines (data passage of DRAM). PAIR is specialized in managing widely distributed inherent faults without the performance degradation, and its correction capability is sufficient to correct burst errors as well. The experimental results analyzed with the latest DRAM model show that the proposed architecture achieves up to 10(6) times higher reliability than XED with 14% performance improvement, and 10 times higher reliability than DUO with a similar performance, on average.
引用
收藏
页数:6
相关论文
共 15 条
[1]  
A. M. D. Inc, 2013, TECH REP
[2]  
[Anonymous], 2014, COARCHITECTING CONTR
[3]  
[Anonymous], 2006, SIGARCH Comput. Archit. News, DOI [DOI 10.1145/1186736.1186737, 10.1145/1186736.1186737]
[4]  
Binkert Nathan, 2011, Computer Architecture News, V39, P1, DOI 10.1145/2024716.2024718
[5]   Defect Analysis and Cost-effective Resilience Architecture for Future DRAM Devices [J].
Cha, Sanguhn ;
Seongil, O. ;
Shin, Hyunsung ;
Hwang, Sangjoon ;
Park, Kwangil ;
Jang, Seong Jin ;
Choi, Joo Sun ;
Jin, Gyo Young ;
Son, Young Hoon ;
Cho, Hyunyoon ;
Ahn, Jung Ho ;
Kim, Nam Sung .
2017 23RD IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE COMPUTER ARCHITECTURE (HPCA), 2017, :61-72
[6]   DUO: Exposing On-chip Redundancy to Rank-Level ECC for High Reliability [J].
Gong, Seong-Lyong ;
Kim, Jungrae ;
Lym, Sangkug ;
Sullivan, Michael ;
David, Howard ;
Erez, Mattan .
2018 24TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE COMPUTER ARCHITECTURE (HPCA), 2018, :683-695
[7]  
Jacob BruceL., 2009, The Memory System: You Can't Avoid It, You Can't Ignore It, You Can't Fake It
[8]  
Kim J, 2015, INT S HIGH PERF COMP, P101
[9]  
Kwon S, 2014, INT SOC DESIGN CONF, P276, DOI 10.1109/ISOCC.2014.7087646
[10]  
M. T. Co, 8GB DDR4 SDRAM