Current-voltage spectroscopy of the subband structure of strongly pinched-off quantum point contacts

被引：6

作者：

Song, J. ^{[1
]}

Kawano, Y. ^{[2
]}

Ishibashi, K. ^{[2
]}

Mikalopas, J. ^{[3
]}

Aizin, G. R. ^{[3
]}

Aoki, N. ^{[4
]}

Reno, J. L. ^{[5
]}

Ochiai, Y. ^{[4
]}

Bird, J. P. ^{[1
,4
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] RIKEN, Inst Phys & Chem Res, Adv Device Lab, Wako, Saitama 3510198, Japan

[3] CUNY, Kingsborough Coll, Dept Phys Sci, Brooklyn, NY 11235 USA

[4] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan

[5] Sandia Natl Labs, CINT, Dept 1132, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期

关键词：

CONDUCTANCE; ELECTRON; TRANSPORT; FIELD; WIRE; BIAS;

D O I：

10.1063/1.3272677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate current-voltage spectroscopy of the one-dimensional subband structure of pinched-off quantum point contacts (QPCs). This technique yields the full subband structure and effective barrier of the QPC, without the need to perform an undesirable average over a range of gate voltage. Our measurements reveal strong asymmetry in the potential drop across the QPC, and a significantly enhanced subband spacing, in the pinch-off regime. (C) 2009 American Institute of Physics. [doi:10.1063/1.3272677]

引用

页数：3

共 26 条

[1] Bolometric terahertz detection in pinched-off quantum point contacts
Song, J. W.
Aizin, G. R.
Mikalopas, J.
Kawano, Y.
Ishibashi, K.
Aoki, N.
Reno, J. L.
Ochiai, Y.
Bird, J. P.
APPLIED PHYSICS LETTERS, 2010, 97 (08)
[2] Current-voltage curves of gold quantum point contacts revisited
Hansen, K
Nielsen, SK
Brandbyge, M
Lægsgaard, E
Stensgaard, I
Besenbacher, F
APPLIED PHYSICS LETTERS, 2000, 77 (05) : 708 - 710
[3] Nonlinear current-voltage curves of gold quantum point contacts
Yoshida, M
Oshima, Y
Takayanagi, K
APPLIED PHYSICS LETTERS, 2005, 87 (10)
[4] Fast and accurate current-voltage curves of metallic quantum point contacts
Hansen, K
Nielsen, SK
Lægsgaard, E
Stensgaard, I
Besenbacher, F
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (04): : 1793 - 1803
[5] CURRENT-VOLTAGE CHARACTERISTICS OF QUANTUM POINT CONTACTS IN THE HIGH-BIAS REGIME
HEINZEL, T
WHARAM, DA
DEAGUIAR, FM
KOTTHAUS, JP
BOHM, G
KLEIN, W
TRANKLE, G
WEIMANN, G
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (06) : 1220 - 1225
[6] CURRENT-VOLTAGE CHARACTERISTICS OF N-N+ POINT CONTACTS
ASHMONTAS, SP
OLEKAS, AP
POZHELA, YK
LAPINSKAS, RB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 759 - 763
[7] Current-voltage characteristics in strongly correlated double quantum dots
Chi, F
Li, SS
JOURNAL OF APPLIED PHYSICS, 2005, 97 (12)
[8] Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale
Gloos, K
Utko, P
Aagesen, M
Sorensen, CB
Hansen, JB
Lindelof, PE
PHYSICAL REVIEW B, 2006, 73 (12):
[9] Thermally activated current-voltage asymmetry in quantum-well inter-subband photodetectors
Kolev, PV
Deen, MJ
Liu, HC
Li, JM
Buchanan, M
Wasilewski, ZR
CANADIAN JOURNAL OF PHYSICS, 1996, 74 : S9 - S15
[10] PECULIARITIES IN CURRENT-VOLTAGE CHARACTERISTICS OF TC-AG POINT CONTACTS AT DIFFERENT TEMPERATURES
ZAKHAROV, AA
TSETLIN, MB
FIZIKA NIZKIKH TEMPERATUR, 1986, 12 (08): : 876 - 880

← 1 2 3 →