Surface Microscopy Characterizations of Large Size Graphene films Grown by Surface Segregation on Ni and Transferred to Si/SiO2 Substrate

被引：1

作者：

Pandey, D. ^{[1
,2
]}

Prakash, G. ^{[1
,2
]}

Yu, Q. ^{[4
]}

Cao, H. ^{[1
,2
]}

Jauregui, L. A. ^{[2
,3
]}

Pei, S. S. ^{[4
]}

Chen, Yong P. ^{[1
,2
,3
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[4] Univ Houston, Dept Elect & Comp Engn, Ctr Adv Mat, Houston, TX 77204 USA

来源：

GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS | 2009年 / 19卷 / 05期

基金：

美国国家科学基金会;

关键词：

TEMPERATURE; GRAPHITE; IMAGES;

D O I：

10.1149/1.3119529

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report surface microscopy characterizations of large size graphene films (up to mm) grown on polycrystalline Ni foils and transferred to Si/SiO2. Wrinkles in such films are studied by both atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Local graphitic lattice structures of the films are imaged with atomic-resolution STM and compared with those of the highly ordered pyrolytic graphite (HOPG).

引用

页码：75 / +

页数：2

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