Single-phase Pb(Zn1/3Nb2/3)O3 thin films grown by metalorganic chemical vapor deposition:: Effects of growth sequence and substrates

被引:2
作者
Nishida, Ken
Yokoyama, Shintaro
Okamoto, Satoshi
Saito, Keisuke
Uchida, Hiroshi
Koda, Seiichiro
Katoda, Takashi
Funakubo, Hiroshi
机构
[1] Kochi Univ Technol, Inst Res, Kochi 7828502, Japan
[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Bruker AXS KK, Yokohama, Kanagawa 2210022, Japan
[4] Sophia Univ, Fac Sci & Technol, Dept Chem, Chiyoda Ku, Tokyo 1028554, Japan
[5] Kochi Univ Technol, Dept Elect & Photon Syst Engn, Kochi 7828502, Japan
关键词
Raman scattering; X-ray diffraction; metalorganic vapor phase epitaxy; PZN film;
D O I
10.1016/j.jcrysgro.2006.10.169
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Pb(Zn1/3Nb2/3)O-3 (PZN) thin films were grown by metalorganic chemical vapor deposition (MOCVD). We systematically investigated what effects the supply sequence of source gases used in MOCVD and substrate types and orientations had on the constituent phase. Alternate-MOCVD, in which source materials of the A-site (Pb) and B-site (Zn and Nb) are alternately supplied to create the perovskite structure ABO(3), which efficiently increases the phase purity of the perovskite phase in the PZN-pyrochlore phase mixture. A relatively smaller mismatch between the PZN and the substrate than that between the pyrochlore phase and the substrate also increased the phase purity of the PZN. As a result, single-phase PZN films were successfully grown on (I 10) and (I I I)MgO substrates by alternate-MOCVD. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:495 / 499
页数:5
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