Samples in Si-Al-R-O-N (R = Y, Gd, Yb) systems were prepared by solid-state reactions using R2O3, Al2O3, SiO2 and Si3N4 powders as starting materials. X-ray diffraction was done to investigate RAM-J(R) solid solutions [RAM = R4Al2O9, J(R) = R4Si2N2O7] formation and their equilibrium with RSO (R4Si2O10). Phase relations between RAM, J(R) and RSO at 1700 degrees C were summarized in a phase diagram. It was determined that a limited solid solution of RAM and RSO could be formed along RAM-RSO tie-line, while RAM and J(R) form a continuous solid solution along RAM-J(R) tie-line. In RAM-J(R)-RSO ternary systems, the RAM-J(R) tie-lines were extended towards the RSO corner to form a continuous solid solution area of JRAMss (R = Y, Gd, Yb). The established phase relations in the Si-Al-R-O-N (R = Y, Gd, Yb) systems may facilitate compositional selections for developing JRAMss as monolithic ceramics or for SiC/Si3N4 based composites using the solid-solutions as a second refractory phase.