Observation of molecular nitrogen in N-doped Ge2Sb2Te5

被引：51
作者：
Kim, Kihong
Park, Ju-Chul
Chung, Jae-Gwan
Song, Se Ahn
Jung, Min-Cherl
Lee, Young Mi
Shin, Hyun-Joon [1 ]
Kuh, Bongjin
Ha, Yongho
Noh, Jin-Seo
机构：
[1] Samsung Adv Inst Technol, AE Ctr, Yongin 446712, South Korea
[2] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea
[3] Samsung Adv Inst Technol, Memory Div, Yongin 446712, South Korea
[4] Samsung Adv Inst Technol, Device Lab, Yongin 446712, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 24期
关键词：
D O I：
10.1063/1.2408660
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ge2Sb2Te5 (GST) film in the crystalline state was nitrogen doped using the reactive sputtering method in order to increase sheet resistance. High-resolution x-ray absorption spectroscopy revealed that molecular nitrogen (N-2) existed in the N-doped GST film. This finding implies that both molecular nitrogen and atomic-state nitrogen should be taken into account in understanding the structures of N-doped GST film. The molecular nitrogen is believed to exist at interstitial and vacancy sites, and more likely at grain boundaries. (c) 2006 American Institute of Physics.
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页数：3
相关论文
共 15 条
[1]   K-SHELL PHOTOABSORPTION OF THE N2 MOLECULE [J].
CHEN, CT ;
MA, Y ;
SETTE, F .
PHYSICAL REVIEW A, 1989, 40 (11) :6737-6740
[2]  
Cho WY, 2005, IEEE J SOLID-ST CIRC, V40, P293, DOI 10.1109/JSSC.2004.837974
[3]   High-resolution x-ray photoelectron spectroscopy on oxygen-free amorphous Ge2Sb2Te5 [J].
Jung, M. -C. ;
Shin, H. J. ;
Kim, K. ;
Noh, J. S. ;
Chung, J. .
APPLIED PHYSICS LETTERS, 2006, 89 (04)
[4]   A study on the crystallization behavior of nitrogen doped Ge2Sb2Te5 thin film [J].
Kim, SM ;
Jun, JH ;
Choi, DJ ;
Hong, SK ;
Park, YJ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L208-L210
[5]   Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of GexSb2Te3+x (x=1,2,3) phase change material [J].
Kooi, BJ ;
De Hosson, JTM .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3584-3590
[6]   Low-cost and nanoscale non-volatile memory concept for future silicon chips [J].
Lankhorst, MHR ;
Ketelaars, BWSMM ;
Wolters, RAM .
NATURE MATERIALS, 2005, 4 (04) :347-352
[7]   Morphotropic phase boundary in epitaxial Pb(Zr,Ti)O3 thin films:: Two-dimensional planar size effect -: art. no. 202901 [J].
Lee, K ;
Baik, S .
APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3
[8]   Soft x-ray spectromicroscope at the pohang light source [J].
Lee, MK ;
Shin, HJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (06) :2605-2609
[9]   Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film [J].
Liu, B ;
Song, ZT ;
Zhang, T ;
Xia, JL ;
Feng, SL ;
Chen, B .
THIN SOLID FILMS, 2005, 478 (1-2) :49-55
[10]   Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase [J].
Nonaka, T ;
Ohbayashi, G ;
Toriumi, Y ;
Mori, Y ;
Hashimoto, H .
THIN SOLID FILMS, 2000, 370 (1-2) :258-261
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