The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

被引：109

作者：

Ahn, C. W. ^{[2
,3
]}

Lee, S. Y. ^{[1
]}

Lee, H. J. ^{[1
]}

Ullah, A. ^{[1
]}

Bae, J. S. ^{[2
,3
]}

Jeong, E. D. ^{[2
,3
]}

Choi, J. S. ^{[4
]}

Park, B. H. ^{[4
]}

Kim, I. W. ^{[1
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Korea Basic Sci Inst, High Technol Components & Mat Res Ctr, Pusan 618230, South Korea

[3] Korea Basic Sci Inst, Busan Ctr, Pusan 618230, South Korea

[4] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 21期

关键词：

ELECTROMECHANICAL PROPERTIES; DIELECTRIC-PROPERTIES; NA0.5K0.5NBO3; FILMS; MICROSTRUCTURE; COEFFICIENTS; GROWTH;

D O I：

10.1088/0022-3727/42/21/215304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

引用

页数：5

共 29 条

[1] Low-frequency and microwave performances of laser-ablated epitaxial Na0.5K0.5NbO3 films on high-resistivity SiO2/Si substrates [J].