GaN Nanowire Field Emitters with a Self-Aligned Gate Process

被引：7

作者：

Shih, Pao-Chuan ^{[1
]}

Rughoobur, Girish ^{[1
]}

Xiang, Peng ^{[2
]}

Liu, Kai ^{[2
]}

Cheng, Kai ^{[2
]}

Akinwande, Akintunde, I ^{[1
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Microsyst Technol Labs, Cambridge, MA 02139 USA

[2] Enkris Semicond Inc, Suzhou 215123, Peoples R China

来源：

2020 DEVICE RESEARCH CONFERENCE (DRC) | 2020年

关键词：

D O I：

10.1109/drc50226.2020.9135161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：2

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