Theoretical analysis of finite-height semiconductor-on-insulator-based planar photonic crystal waveguides

被引：29

作者：

Sondergaard, T ^{[1
]}

Arentoft, J ^{[1
]}

Kristensen, M ^{[1
]}

机构：

[1] Tech Univ Denmark, COM, DK-2800 Lyngby, Denmark

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2002年 / 20卷 / 08期

关键词：

design; integrated optics; optical waveguide; photonic bandgap; photonic crystal;

D O I：

10.1109/JLT.2002.800380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A planar photonic crystal waveguide based on the semiconductor-on-insulator (SOI) materials system is analyzed theoretically. Two-dimensional (2-D) calculations and comparison with dispersion relations for the media above and below the finite-height waveguide are used to obtain design guidelines. Three-dimensional (3-D) calculations are given for the dispersion relations and field profiles. The field profiles obtained using 2-D and 3-D calculations are qualitatively similar. However, we find that compared with 2-D calculations, the frequencies of the guided modes are shifted and the number of guided modes changes. The theoretically predicted frequency intervals, where the waveguide supports leakage-free guidance of light, are compared with an experimental measurement for propagation losses. Two out of three frequency intervals coincide with low-measured propagation losses. The poor guidance of light for the third frequency interval is explained theoretically by investigating the vertical localization of the guided modes.

引用

页码：1619 / 1626

页数：8