Finite Element Modeling of Stress Evolution in Sn Films due to Growth of the Cu6Sn5 Intermetallic Compound

被引：48

作者：

Buchovecky, Eric ^{[1
]}

Jadhav, Nitin ^{[1
]}

Bower, Allan F. ^{[1
]}

Chason, Eric ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 12期

关键词：

Pb-free solder; Sn whisker; finite element; grain boundary diffusion; SPONTANEOUS WHISKER GROWTH; TIN WHISKERS; PLASTIC-DEFORMATION; CU;

D O I：

10.1007/s11664-009-0911-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use finite element simulations to quantitatively evaluate different mechanisms for the generation of stress in Sn films due to growth of the Cu6Sn5 intermetallic phase at the Cu-Sn interface. We find that elastic and plastic behavior alone are not sufficient to reproduce the experimentally measured stress evolution. However, when grain boundary diffusion is included, the model results agree well with experimental observations. Examination of conditions necessary to produce the observed stresses provides insight into potential strategies for minimizing stress generation and thus mitigating Sn whisker growth.

引用

页码：2676 / 2684

页数：9

共 24 条

[1]

Arnold S.M., 1959, Proc. of the IEEE Elec. Comp. Conf, P75

[2] Whisker and hillock formation on Sn, Sn-Cu and Sn-Pb electrodeposits [J].