Improving Performance of Amorphous Silicon Solar Cells Using Tungsten Oxide as a Novel Buffer Layer between the SnO2/p-a-SiC Interface

被引：0

作者：

Fang, Liang ^{[1
]}

Baik, Seung Jae ^{[1
]}

Lim, Koeng Su ^{[1
]}

Yoo, Seung Hyup ^{[1
]}

Seo, Myung Soo ^{[1
]}

Kang, Sang Jung ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, 335 Gwahak Ro, Daejeon 305701, South Korea

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010 | 2010年 / 1245卷

关键词：

WO3; FILMS; THIN-FILM; CONDUCTIVITY; CARBON;

D O I：

10.1557/PROC-1245-A07-05

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a novel buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon (a-Si) based solar cells. By using this film, a-Si solar cells with a p-a-WO3/pa- SiC double p-layer structure were fabricated and the cell photovoltaic characteristics were investigated as a function of p-a-WO3 layer thickness. By inserting a 2 nm-thick p-a-WO3 layer between SnO2 and a 6 nm-thick p-a-SiC layer, the short circuit current density increased from 9.73 to 10.57 mA/cm(2), and the conversion efficiency was enhanced from 5.17 % to 5.98 %.

引用

页码：131 / 136

页数：6

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