Czochralski silicon detectors irradiated with 24GeV/c and 10 MeV protons

被引:14
作者
Tuovinen, E.
Harkonen, J.
Luukka, P.
Tuominen, E.
Verbitskaya, E.
Eremin, V.
Yashenko, I.
Pirojenko, A.
Riihimaki, I.
Virtanen, A.
Leinonen, K.
机构
[1] Univ Helsinki, Helsinki Inst Phys, FIN-00014 Helsinki, Finland
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia
[3] Univ Jyvaskyla, Accelerator Lab, SF-40351 Jyvaskyla, Finland
[4] Lappeenranta Univ Technol, Lappeenranta, Finland
基金
芬兰科学院;
关键词
silicon detectors; radiation hardness; Czochralski silicon; transient current technique; scanning electron microscope;
D O I
10.1016/j.nima.2006.05.208
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV/c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, beta-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV/c protons even after high irradiation fluence. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:83 / 88
页数:6
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