Cu-doped PbS thin films with low resistivity prepared via chemical bath deposition

被引：38

作者：

Zheng, Xiaoyao ^{[1
]}

Gao, Fei ^{[1
]}

Ji, Fangxu ^{[1
]}

Wu, Huijun ^{[1
]}

Zhang, Junshan ^{[2
]}

Hu, Xihong ^{[1
]}

Xiang, Yuchun ^{[1
]}

机构：

[1] Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Peoples R China

[2] Engn Univ Armed Police Force, Coll Equipment Engn, Xian 710086, Peoples R China

来源：

MATERIALS LETTERS | 2016年 / 167卷

关键词：

Thin films; Semiconductors; Deposition; Structural; Electrical properties; SENSITIZED SOLAR-CELLS; ELECTRICAL CHARACTERIZATION; SEMICONDUCTOR NANOCRYSTALS; SULFIDE; IONS;

D O I：

10.1016/j.matlet.2015.12.077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu-doped PbS thin films were deposited on glass substrates using a chemical bath deposition (CBD) method. The effect of Cu doping concentration on the structural and electrical properties of the PbS thin films was studied. X-ray diffraction (XRD) measurements reveal that all doped PbS thin films have a galena cubic structure and good crystallinity. Hall effect measurements show that Cu doping has an obvious influence on the carrier concentration, mobility, and resistivity of the PbS thin films. The carrier concentration increases from 3.49 x 10(15) cm(-3) up to 4.26 x 10(15) cm(-3) as the Cu concentration increases from 0 to 6.3 at%. The lowest electrical resistivity of 0.15 Omega cm is obtained at 6.3 at% Cu doping. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：128 / 130

页数：3

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