Quantifying CVD diamond growth and morphology: a useful technique for studying growth kinetics

被引:6
作者
Rigby, SD [1 ]
Cherian, KA [1 ]
Litster, JD [1 ]
Rudolph, V [1 ]
White, ET [1 ]
机构
[1] Univ Queensland, Dept Chem Engn, St Lucia, Qld 4067, Australia
关键词
chemical vapour deposition; diamond; growth kinetics; morphology; single crystals;
D O I
10.1016/S0925-9635(00)00238-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present formulae for determining alpha and the average growth rate in the < 100 > and < 111 > directions (V-100 and V-111) from a micrograph of a single diamond crystal. The growth-rate equations provide a simple and powerful tool for studies into the kinetics of diamond chemical vapour deposition (CVD), as alternative measures of the growth rate are based on polycrystalline films. A large part of the film kinetics is confounded with issues such as nucleation, film evolution, and differences between the crystallographic faces. Our measure of growth rate avoids these issues. The alpha equation provides a simpler and more accurate method to determine its value than other methods described in literature. The derivation of the equations is based on the progressive truncation of cubic and octahedral crystals by removing prisms from the corners to leave cubo-octahedral crystals. A worked example of the application of the equations is presented. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码:328 / 332
页数:5
相关论文
共 16 条
  • [1] ALEXANDER WB, 1992, SURFACE COATING TECH, V54, P387
  • [2] BARRAT S, 1994, DIAM RELAT MATER, V3, P524
  • [3] TEXTURES AND MORPHOLOGIES OF CHEMICAL VAPOR-DEPOSITED (CVD) DIAMOND
    CLAUSING, RE
    HEATHERLY, L
    HORTON, LL
    SPECHT, ED
    BEGUN, GM
    WANG, ZL
    [J]. DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) : 411 - 415
  • [4] PRESSURE AND TEMPERATURE EFFECTS ON THE KINETICS AND QUALITY OF DIAMOND FILMS
    HARRIS, SJ
    WEINER, AM
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5026 - 5032
  • [5] FILAMENT-ASSISTED DIAMOND GROWTH-KINETICS
    HARRIS, SJ
    WEINER, AM
    PERRY, TA
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1385 - 1391
  • [6] DIAMOND GROWTH-RATES VS ACETYLENE CONCENTRATIONS
    HARRIS, SJ
    WEINER, AM
    [J]. THIN SOLID FILMS, 1992, 212 (1-2) : 201 - 205
  • [7] SYNTHESIS OF DIAMONDS BY USE OF MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION - MORPHOLOGY AND GROWTH OF DIAMOND FILMS
    KOBASHI, K
    NISHIMURA, K
    KAWATE, Y
    HORIUCHI, T
    [J]. PHYSICAL REVIEW B, 1988, 38 (06): : 4067 - 4084
  • [8] DETERMINATION OF ACTIVATION-ENERGIES FOR DIAMOND GROWTH BY AN ADVANCED HOT FILAMENT CHEMICAL VAPOR-DEPOSITION METHOD
    KONDOH, E
    OHTA, T
    MITOMO, T
    OHTSUKA, K
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (04) : 488 - 490
  • [9] SURFACE-REACTION KINETICS OF GAS-PHASE DIAMOND GROWTH
    KONDOH, E
    OHTA, T
    MITOMO, T
    OHTSUKA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 3041 - 3046
  • [10] THE INFLUENCE OF ORIENTED GROWTH ON THE SURFACE-ROUGHNESS OF CVD DIAMOND FILMS
    NORGARD, C
    ESKILDSEN, SS
    MATTHEWS, A
    [J]. SURFACE & COATINGS TECHNOLOGY, 1995, 74-5 (1-3) : 358 - 361