Motion of atomic steps on ultraflat Si(111): Constructive collisions

被引：7
作者：
Finnie, P [1 ]
Homma, Y [1 ]
机构：
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 04期
关键词：
D O I：
10.1116/1.582450
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The motion of atomic steps was studied using ultraflat Si(lll) substrates which have flat terraces of up to 50 mu m in width separated by monoatomic steps. The motion is revealed in time lapse movies made by in situ scanning electron microscopy. When samples are heated to high temperatures (similar to 1000 degrees C) the surface erodes in a step-flow mode: steps retreat in an orderly fashion, one after the other. Here, steps are forced to collide constructively, providing a means to probe step interactions. Diffusion theory is used to explain the collision dynamics, allowing the extraction of physical parameters. After colliding, double steps continue to move at speeds simply related to the precursor steps' velocities. (C) 2000 American Vacuum Society. [S0734-2101(00)03004-9].
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页码：1941 / 1945
页数：5
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