Growth of cubic III-nitride semiconductors for electronics and optoelectronics application

被引：23

作者：

Yoshida, S ^{[1
]}

机构：

[1] Saitama Univ, Fac Engn, Urawa, Saitama 3388570, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期

关键词：

III-nitride semiconductors; gas source MBE; surface phase diagram; surfactant effect;

D O I：

10.1016/S1386-9477(00)00086-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

III-nitrides with cubic zincblende crystal structure (c-nitrides) have been successfully obtained recently, and their physical properties have been reported. However, still, the differences in the properties from those of hexagonal wurtzite structure (h-nitrides) have not been made clear, mainly because of the poor crystalline quality of c-nitrides obtained. Many theoretical works have predicted superior physical properties of c-nitrides, which are good for their device application, compared with h-nitrides. The growth control and characterization of c-nitrides are studied, and the prospect of their application for electronics and optoelectronics is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：907 / 914

页数：8

共 40 条

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