Developments of two 4 x 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments

被引:8
|
作者
Guo, D. [1 ]
Gong, D. [1 ]
Xiang, A. C. [1 ]
Moreira, P. [2 ]
Kulis, S. [2 ]
Chen, J. [3 ]
Hou, S. [4 ]
Liu, C. [1 ]
Liu, T. [1 ]
Prosser, A. [5 ]
He, H. [6 ,7 ]
Sun, Q. [1 ]
Wang, J. [1 ,8 ]
Yang, D. [1 ,8 ]
Ye, J. [1 ]
Zhou, W. [1 ]
机构
[1] Southern Methodist Univ, Dept Phys, Dallas, TX 75275 USA
[2] CERN, CH-1211 Geneva 23, Switzerland
[3] Univ Houston, Dept Elect Engn, Houston, TX 77004 USA
[4] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[5] Fermi Natl Lab, Real Time Syst Engn Dept, Batavia, IL 60510 USA
[6] Shenzhen Polytech, Shzenzhen 518055, Guangdong, Peoples R China
[7] Cent China Normal Univ, Dept Phys, Wuhan 430079, Hubei, Peoples R China
[8] Univ Sci & Technol China, State Key Lab Particle Detect & Elect, Hefei 230026, Anhui, Peoples R China
来源
JOURNAL OF INSTRUMENTATION | 2017年 / 12卷
关键词
Optical detector readout concepts; Radiation-hard electronics; Analogue electronic circuits; Front-end electronics for detector readout;
D O I
10.1088/1748-0221/12/02/C02065
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This paper presents the designs and test results of two radiation tolerant 4 x 10 Gb/s vertical cavity surface emitting laser (VCSEL) array drivers VLAD and lpVLAD, both fabricated in a 1.2V 65 nm CMOS technology. VLAD adopts a power efficient bandwidth-boost technology, and lpVLAD employs a novel high-efficiency output structure to achieve an ultra-lowpower consumption of 2.2 mW/Gb/ch with 2mA bias current and 6mA modulation current. Both drivers are optically tested passing 10 Gb/s eye mask with all channels active under the radiation of a total dose up to 350 Mrad(SiO2).
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页数:11
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