Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires

被引：4

作者：

Byeun, Yun-Ki

Han, Kyong-Sop

Choi, Heon-Jin

Choi, Sung-Churl ^{[1
]}

机构：

[1] Hanyang Univ, Dept Ceram Engn, Seoul 133791, South Korea

[2] Korea Inst Sci & Technol, Div Mat Sci & Technol, Seoul 136791, South Korea

[3] Yonsei Univ, Sch Adv Mat Sci & Engn, Seoul 120749, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2007年 / 452卷

关键词：

III-V group semiconductors; Mn doped GaN; one-dimensional nanostructure; nanowires; dilute magnetic semiconductors;

D O I：

10.1016/j.msea.2006.10.071

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of < 100 nm and length of several mu m. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04. (c) 2006 Published by Elsevier B.V.

引用

页码：499 / 502

页数：4

共 22 条

[1] Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN [J].