Properties of silicon doped silicon dioxide thin films deposited by Co-sputtering of silicon and silicon dioxide

被引：1

作者：

Sandhu, A ^{[1
]}

Show, Y ^{[1
]}

Katano, T ^{[1
]}

Iwase, M ^{[1
]}

Izumi, T ^{[1
]}

Yabe, T ^{[1
]}

Nozaki, S ^{[1
]}

Morisaki, H ^{[1
]}

机构：

[1] UNIV ELECTROCOMMUN,CHOFU,TOKYO 182,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

silicon crystallites; photoluminescence; silicon dioxide; electron spin resonance; interface states;

D O I：

10.1016/S0169-4332(97)80156-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of annealing on silicon doped SiO2 films was studied by X-ray diffraction, electron spin resonance (ESR) and Fourier transform photoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-deposited samples bur annealed samples showed FTPL at room temperature centred at about 900 nm and also an anomalous variation of thr FTPL intensity with temperature. ESR measurements showed the presence of g = 2.003 and g = 2.006 centres. implications of the results will be discussed in thr context that silicon crystallites were formed due to the annealing.

引用

页码：634 / 637

页数：4

共 8 条

[1] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].