Liquid phase epitaxy of (Sn2)1-x(InSb)x solid solution layers

被引：2

作者：

Saidov, AS ^{[1
]}

Razzakov, AS ^{[1
]}

Saparov, DV ^{[1
]}

机构：

[1] Acad Sci Republ Uzbekistan, Solar Phys Res & Prod Corp, Inst Engn Phys, Tashkent, Uzbekistan

来源：

TECHNICAL PHYSICS LETTERS | 2002年 / 28卷 / 11期

关键词：

Solid Solution; Liquid Phase; GaAs; Growth Condition; Temperature Interval;

D O I：

10.1134/1.1526886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of (Sn-2)(1 - x)(InSb)(x) solid solutions were grown from an indium-based solution melt confined between two horizontal GaAs substrates in a temperature interval from 325 to 200degreesC. Scanning microprobe and X-ray diffraction investigations of the GaAs-(Sn-2)(1 - x)(InSb)(x) heterostructures showed that crystallographic perfection of the epitaxial layers depends on the epitaxial growth conditions. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：927 / 928

页数：2