Gold nanoparticle charge trapping and relation to organic polymer memory devices

被引：27

作者：

Prime, D. ^{[1
]}

Paul, S. ^{[1
]}

Josephs-Franks, P. W. ^{[1
,2
]}

机构：

[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England

[2] Natl Phys Lab, Teddington TW11 0LW, Middx, England

来源：

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2009年 / 367卷 / 1905期

基金：

英国工程与自然科学研究理事会;

关键词：

gold nanoparticle; organic polymer memory device; metal-insulator-semiconductor capacitor; trapped charge density; THIN-FILM; BISTABILITY;

D O I：

10.1098/rsta.2009.0141

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Nanoparticle-based polymer memory devices (PMDs) are a promising technology that could replace conventional silicon-based electronic memory, offering fast operating speeds, simple device structures and low costs. Here we report on the current state of nanoparticle PMDs and review some of the problems that are still present in the field. We also present new data regarding the charging of gold nanoparticles in metal-insulator-semiconductor capacitors, showing that charging is possible under the application of an electric field with a trapped charge density due to the nanoparticles of 3.3 x 10(12) cm(-2).

引用

页码：4215 / 4225

页数：11

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