Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS2 single crystal

The effect of gamma irradiation on the dielectric properties and ac conductivity of a TlInS2 single crystal with a layered structure has been investigated in the frequency range from 5 x 10(4) to 3.5 x 10(7)Hz. It has been shown that gamma irradiation of the TlInS2 single crystal with a dose of 10(4)-2.25 x 10(6) rad leads to a considerable increase in the dielectric loss tangent tan delta, the real part E >' and imaginary part E > aEuro(3) of the complex permittivity, and the ac conductivity sigma (ac) across the layers. It has been established that, for all gamma irradiation doses, the TlInS2 single crystal is characterized by the dielectric loss due to electrical conduction up to a frequency of 10(7) Hz and by the relaxation loss at a higher frequency. Irradiation of the TlInS2 single crystal results in an increase in the dispersion of tan delta, E > aEuro(2), and E > aEuro(3). It has been demonstrated that, as the gamma irradiation dose is accumulated in the TlInS2 single crystal, the density of localized states near the Fermi level N (F) increases (from 5.2 x 10(18) to 1.9 x 10(19) eV(-1) cm(-3)).