Numerical Study of Melt Flow Pattern by Thermal Gradient of the Crucible in the Czochralski Process

被引：0
|
作者：
Park, Jong-In [1 ]
Han, Jeong-Whan [1 ]
机构：
[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea
来源：
JOURNAL OF THE KOREAN INSTITUTE OF METALS AND MATERIALS | 2009年 / 47卷 / 11期
关键词：
Czochralski method; single crystal; silicon; computer simulation; CRYSTAL-GROWTH; HEAT-TRANSFER; SILICON; CONVECTION; TURBULENCE; INTERFACE; MODEL; VCZ;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is well known that the temperature and the flow pattern of the crystal-melt interface affect the qualities of the single crystal in the Czochralski process. Thus the temperature profile in the growth system is very important information. This work focuses on controlling the temperature of the silicon melt with a thermal gradient of the crucible. Therefore, the side heater is divided into three parts and an extra heater is added at the bottom for thermal gradient. The temperature of the silicon melt can be strongly influenced and controlled by the electric power of each heater.
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页码：734 / 739
页数：6
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