A simple large-scale synthesis of very long aligned silica nanowires

被引：115

作者：

Hu, JQ ^{[1
]}

Jiang, Y ^{[1
]}

Meng, XM ^{[1
]}

Lee, CS ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, COSDAF, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 367卷 / 3-4期

关键词：

D O I：

10.1016/S0009-2614(02)01697-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A simple method based on the thermal oxidation of Si wafers has been discovered to provide a large-scale synthesis of very long, aligned silica nanowires. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence. The obtained SiO2 nanowires had no metal contaminations, ultralong lengths of millimeters, and most diameters of similar to50 nm. The PL spectra of the SiO2 nanowires showed a strong and stable green emission at 540 nm. The nucleation and growth of the SiO2 nanowires were investigated. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：339 / 343

页数：5

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