High filling fraction gallium phosphide inverse opals by atomic layer deposition

被引：30

作者：

Graugnard, E. ^{[1
]}

Chawla, V. ^{[1
]}

Lorang, D. ^{[1
]}

Summers, C. J. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 21期

关键词：

D O I：

10.1063/1.2387874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High filling fraction gallium phosphide (GaP) inverse opals were fabricated by atomic layer deposition within the void spaces of silica colloidal crystal templates. Depositions were performed from 400 to 500 degrees C using trimethylgallium and tris(dimethylamino)phosphine precursors. The resulting films were characterized by optical reflectance, which indicated infiltration as high as 100% of the conformal film growth maximum, corresponding to a volume filling fraction of 0.224. X-ray diffraction measurements confirmed the crystallinity of the film. These results indicate the fabrication of three-dimensional photonic crystals using a III-V optoelectronic material with sufficient dielectric contrast to form a full photonic band gap in the visible. (c) 2006 American Institute of Physics.

引用

页数：3

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