Growing FeIn2S4 single crystals and fabrication of photosensitive structures on their basis

Bulk single crystals of FeIn2S4 have been grown for the first time by the method of directional crystallization of an almost stoichiometric melt. The first photosensitive structures of the In(Al)/FeIn2S4 have been fabricated. Using the crystals grown, the first spectra of photosensitivity of the new structures have been obtained at T = 300 K. Based on an analysis of the photosensitivity spectra, it has been established that the edge absorption of FeIn2S4 is formed by indirect and direct interband transitions, and the values of the energy gap corresponding to these transitions have been estimated. A conclusion was made on the possibility of applying the structures obtained in wideband photoconverters.