High Efficiency Silicon Solar Cells with Bilayer Passivation Structure

被引：11

作者：

Sun, W. C. ^{[1
]}

Chang, W. L. ^{[1
]}

Chen, C. H. ^{[1
]}

Du, C. H. ^{[1
,2
]}

Wang, T. Y. ^{[1
]}

Wang, T. ^{[1
,3
]}

Lan, C. W. ^{[1
,4
]}

机构：

[1] Ind Technol Res Inst, Photovolta Technol Ctr, Hsinchu 310, Taiwan

[2] Natl Tsing Hua Univ, Inst Nano Engn & Micro Syst, Hsinchu 310, Taiwan

[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[4] Natl Taiwan Univ, Dept Chem Engn, Taipei 106, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 10期

关键词：

SURFACE PASSIVATION; RECOMBINATION; INTERFACE; CHARGE;

D O I：

10.1149/1.3194252

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

lThe effects of passivation on monocrystalline silicon solar cells were investigated. Al2O3 and SiO2 films, prepared by atomic layer deposition and thermal oxidation, respectively, were used as passivation layers. Passivation using a monolayer (SiO2) yielded a cell efficiency of 17.5%. However, the Al2O3/SiO2 bilayer structure drastically increased cell efficiency to 20.1%. Quantum efficiency results revealed a significant improvement in the IR range, suggesting that bilayer passivation was effective on the back of a solar cell in providing a high energy conversion efficiency. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3194252] All rights reserved.

引用

页码：H388 / H391

页数：4

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