Self-buffered BaxSr1-xTiO3 films by sol-gel and RF magnetron sputtering method

被引：4
作者：
Zhang, WX [1 ]
Xu, ZY [1 ]
Wang, CA [1 ]
Zhao, BF [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2003年 / 38卷 / 01期
关键词：
ferroelectricity; thin films; sol-gel chemistry; sputtering; dielectric properties;
D O I：
10.1016/S0025-5408(02)00981-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
BaxSr1-xTiO3 (BST) films are fabricated by sol-gel and RF (radio frequency) magnetron sputtering method. A buffer layer with columnar grains by sol-gel method is introduced to improve the dielectric anomaly in BST films. We find that the presence of buffer layer can increase the differential dielectric constant against temperature in sol-gel derived BST films while not so with sputtered films. We explain this by an 'expanded layer thickness model' and an unstable crystallized surface, respectively. The obtained (depsilon/epsilon) dT is up to 6% around 11 degreesC by the sol-gel method. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：133 / 139
页数：7
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