All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion

被引：8

作者：

Raymenants, Eline ^{[1
,2
]}

Wan, Danny ^{[1
]}

Couet, Sebastien ^{[1
]}

Souriau, Laurent ^{[1
]}

Thiam, Arame ^{[1
]}

Tsvetanova, Diana ^{[1
]}

Canvel, Yann ^{[1
]}

Garello, Kevin ^{[1
,3
]}

Kar, Gouri S. ^{[1
]}

Heyns, Marc ^{[1
,2
]}

Asselberghs, Inge ^{[1
]}

Nikonov, Dmitri E. ^{[4
]}

Young, Ian A. ^{[4
]}

Pizzini, Stefania ^{[5
]}

Radu, Iuliana ^{[1
]}

Van Dai Nguyen ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Mat Engn, B-3001 Leuven, Belgium

[3] Spintec, F-38000 Grenoble, France

[4] Intel Corp, Hillsboro, OR 97124 USA

[5] Inst Neel, F-38000 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 04期

关键词：

Magnetic tunneling; Magnetic domains; Magnetic domain walls; Magnetic separation; Magnetic devices; Switches; Etching; Magnetic domain walls (DWs); magnetic logic devices; magnetic memory; spintronics; tunneling magnetoresistance (TMR);

D O I：

10.1109/TED.2021.3061523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic tunnel junctions (MTJs) and is processed by DW motion. Here, we demonstrate that all-electrical control of such nanoscale DW-based logic devices can be realized using a novel MTJ stack. In addition to field-driven motion, which is isotropic, we show the directional motion of DWs driven by current, a key requirement for logic operation. Full electrical control of an AND logic gate using DW motion is demonstrated. Our devices are fabricated in imec's 300-mm CMOS fab on full wafers, which clears the path for large-scale integration. This proof of concept, thus, offers potential solutions for high-performance and low-power DW-based devices for logic and neuromorphic applications.

引用

页码：2116 / 2122

页数：7

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