Effect of efficiency "droop" in violet and blue InGaN laser diodes

被引：21

作者：

Grzanka, S. ^{[1
,2
]}

Perlin, P. ^{[1
,2
]}

Czernecki, R. ^{[1
,2
]}

Marona, L. ^{[1
]}

Bockowski, M. ^{[1
,2
]}

Lucznik, B. ^{[1
]}

Leszczynski, M. ^{[1
,2
]}

Suski, T. ^{[1
]}

机构：

[1] Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

关键词：

gallium compounds; III-V semiconductors; indium compounds; laser cavity resonators; semiconductor lasers; wide band gap semiconductors;

D O I：

10.1063/1.3211129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied two types of InGaN laser diodes emitting at 410 and 440 nm. Each device was characterized by measuring light-current characteristics in two geometries for which the light was collected: along the resonator and perpendicularly to the cavity. In the first configuration, the 410 nm device displays no reduction of differential efficiency while 440 nm laser shows evidence of droop. In the perpendicular configuration both devices show the pronounced droop. We associate the suppression of the droop for 410 nm laser in the "along cavity" configuration with the appearance of the stimulated recombination.

引用

页数：3

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