400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

被引：221

作者：

Chang, SJ ^{[1
]}

Kuo, CH

Su, YK

Wu, LW

Sheu, JK

Wen, TC

Lai, WC

Chen, JF

Tsai, JM

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

[4] S Epitaxy Corp, Tainan 744, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 04期

关键词：

AlGaN; light-emitting diode; multiquantum well; organometallic vapor phase epitaxy;

D O I：

10.1109/JSTQE.2002.801677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

引用

页码：744 / 748

页数：5

共 20 条

[1]

BUNNER D, 1997, J APPL PHYS, V82, P5090

[2] High brightness green light emitting diodes with charge asymmetric resonance tunneling structure [J].

Chen, CH ;

Su, YK ;

Chang, SJ ;

Chi, GC ;

Sheu, JK ;

Chen, JF ;

Liu, CH ;

Liaw, YH .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (03) :130-132

[3] GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Chi, JY ;

Chang, CA ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :848-850

[4] Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching [J].

Chen, CHS ;

Chang, SJ ;

Su, YKI ;

Chi, GC ;

Sheu, JK ;

Lin, IC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B) :2762-2764

[5] AlGaN/GaN quantum well ultraviolet light emitting diodes [J].

Han, J ;

Crawford, MH ;

Shul, RJ ;

Figiel, JJ ;

Banas, M ;

Zhang, L ;

Song, YK ;

Zhou, H ;

Nurmikko, AV .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1688-1690

[6] On the carrier concentration and Hall mobility in GaN epilayers [J].

Ko, CH ;

Chang, SJ ;

Su, YK ;

Lan, WH ;

Chen, JF ;

Kuan, TM ;

Huang, YC ;

Chiang, CI ;

Webb, J ;

Lin, WJ .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (3A) :L226-L228

[7] Low temperature activation of Mg-doped GaN in O2 ambient [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Chen, CH ;

Chi, GC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (2A) :L112-L114

[8] InGaN-AlInGaN multiquantum-well LEDs [J].

Lai, WC ;

Chang, SJ ;

Yokoyam, M ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (06) :559-561

[9]

Martin G, 1996, APPL PHYS LETT, V68, P2541, DOI 10.1063/1.116177

[10] VALENCE-BAND DISCONTINUITY BETWEEN GAN AND ALN MEASURED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].

MARTIN, G ;

STRITE, S ;

BOTCHKAREV, A ;

AGARWAL, A ;

ROCKETT, A ;

MORKOC, H ;

LAMBRECHT, WRL ;

SEGALL, B .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :610-612

← 1 2 →